About this role
SiC Power Device Research Scientist – MVHV Design at Cree. Location: Durham, North Carolina, United States. Role: Lead device development, Explore device concepts, Perform DoE activities Requirements: PhD in electrical engineering or solid state physics; 5-10 years in high-voltage silicon bipolar power device development; strong device physics knowledge; hands-on device characterization; CAD and TCAD tools; DOE and data interpretation; team player with strong communication. Category: Engineering Seniority: Senior Level Tools: TCAD, CAD Commitment: Full Time Workplace: Onsite Languages: English